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HiperFET TM Power
MOSFETs
Single MOSFET Die
IXFK180N10
IXFX180N10
V DSS
I D25
R DS(on)
=
=
≤
100V
180A
8m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
100
100
V
V
G
D
S
(TAB)
V GSS
V GSM
Continuous
Transient
± 20
± 30
V
V
I D25
I LRMS
I DM
I A
E AS
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
T C = 25 ° C ( Chip Capabitlty)
Leads Current Limit, RMS
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
180
160
720
180
3
5
560
-55 ... +150
150
-55 ... +150
300
260
A
A
A
A
J
V/ns
W
° C
° C
° C
° C
° C
PLUS247 (IXFX)
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
International Standard Packages
M d
Weight
Mounting Force
MountingTorque
PLUS247
TO-264
(PLUS247)
(TO-264)
20..120/4.5..27
1.13/10
6
10
N/lb.
Nm/lb.in.
g
g
High Current Handling Capability
Avalanche Rated
Low R DS(on) HDMOS TM Process
Fast intrinsic diode
Low Package Inductance
Advantages
Easy to Mount
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Space Savings
High Power Density
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 3mA
V DS = V GS , I D = 8mA
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 0.5 ? I D25 , Note 1
T J = 125 ° C
100
2.0
V
4.0 V
± 100 nA
100 μ A
2 mA
8 m Ω
Applications
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Temperature and Lighting Controls
? 2009 IXYS CORPORATION, All Rights Reserved
DS98552D(02/09)
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相关代理商/技术参数
IXFK180N10_09 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiperFET Power MOSFETs
IXFK180N15P 功能描述:MOSFET 180 Amps 150V 0.011 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK180N25T 功能描述:MOSFET 180A 250V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK185N10 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 185A I(D) | TO-264AA
IXFK200N10P 功能描述:MOSFET 200 Amps 100V 0.0075 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK20N120 功能描述:MOSFET 20 Amps 1200 V 0.75 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK20N120P 功能描述:MOSFET 20 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK20N80Q 功能描述:MOSFET 20 Amps 800V 0.42 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube